J. Gervais, EXPERIMENTAL OF THE OPTICAL-ABSORPTION COEFFICIENT OF THE MULTICRYSTALLINE P-TYPE SOLAR GRADE SILICON, Journal de physique. III, 3(7), 1993, pp. 1489-1495
Citations number
11
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
The minority carrier diffusion length L characterizes the electrical q
uality of multicrystalline silicon wafers used for photovoltaics. Its
determination before and after different treatments (impurity diffusio
n, passivation, metallisation) is needfull and requires the accurate k
nowledge of the optical absorption coefficient alpha in the near infra
red. We have determinated the spectral variation of alpha in the range
between 0.86 and 1.06 mum and we propose an analytic expression which
is very close to those proposed for solar grade single crystals. In a
ddition we have verified that the values of alpha are not affected by
long phosphorus diffusion needed to getter metallic impurities.