ONE-STEP IN-DIFFUSION AS A RESULT OF MULTIPULSE LASER IRRADIATION OF LINBO3 SINGLE-CRYSTALLINE SUBSTRATES COVERED WITH THIN TI DEPOSITS - ON THE EFFECT OF THE RADIATION WAVELENGTH

We studied Ti in-diffusion as an effect of multipulse laser irradiatio n, in either visible of ultraviolet (u.v.) spectral ranges, of LiNbO3 single-crystalline structures with Ti coatings of two different thickn esses. It is shown that while u.v. (excimer, lambda almost-equal-to 30 8 nm) laser irradiation causes a complete expulsion of the Ti deposit, the visible (ruby, lambda almost-equal-to 694.3 nm) laser irradiation at intermediate incident laser fluence (up to almost-equal-to 0.7 J c m-2) promotes efficient Ti in-diffusion from the thin (400 angstrom wi dth) Ti deposit down to a micrometre range implantation depth.