SELECTIVE DEPOSITION OF SILICON BY MERCURY SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITION

The authors have developed a low-temperature process for selective dep osition of silicon by mercury sensitized photochemical vapor depositio n (Photo-CVD) without using ultraclean technology. It was found that h ydrogen radical pretreatment was required to obtain selective depositi on. There was an incubation period f or not only SiO2 surface but also Si surface. It was confirmed that mercury sensitized Photo-CVD is a p romising method for selective deposition process at low temperature us ing large-area glass substrate.