COMPARISON OF SURFACE-CHARGE ANALYSIS AND MOS C-V AS TECHNIQUES FOR IONIC IMPURITY DETECTION IN SI SIO2 STRUCTURES/

Surface charge analysis (SCA) is a novel technique which utilizes the surface photovoltage (SPV) effect to measure depletion layer widths in silicon. It is demonstrated to be a superior alternative to capacitan ce-voltage (CV) measurements for the detection of ionic impurities in Si/SiO2 structures. Not only is SCA demonstrated to have higher resolu tion but, since it does not require the fabrication of a MOS capacitor , ionic impurity evaluations can be performed much faster than by CV a nd at a far lower cost. Detailed experiments and statistical analyses comparing the two techniques are presented.