DOPANT-TYPE SELECTIVE ELECTROLESS PHOTOETCHING OF ZN-DIFFUSED INP ANDINGAAS INP HETEROSTRUCTURES/

Authors
WILLIAMSON JB CAREY KW
Citation
Jb. Williamson et Kw. Carey, DOPANT-TYPE SELECTIVE ELECTROLESS PHOTOETCHING OF ZN-DIFFUSED INP ANDINGAAS INP HETEROSTRUCTURES/, Journal of the Electrochemical Society, 140(7), 1993, pp. 2125-2128
Citations number
11
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
140
Issue
7
Year of publication
1993
Pages
2125 - 2128
Database
ISI
SICI code
0013-4651(1993)140:7<2125:DSEPOZ>2.0.ZU;2-H
Abstract
Localized electroless photoetching is used successfully to visualize t he p-n junction in Zn-diffused InP and InGaAs/InP heterostructures. Th is technique is superior to KFeCN-based etching due to greater dopant selectivity and low dark etch rate.