EXCITON-STATES IN GAAS ALGAAS BRAGG CONFINING STRUCTURES STUDIED BY RESONANT RAMAN-SCATTERING/

Citation
M. Zahler et al., EXCITON-STATES IN GAAS ALGAAS BRAGG CONFINING STRUCTURES STUDIED BY RESONANT RAMAN-SCATTERING/, Physical review letters, 71(3), 1993, pp. 420-423
Citations number
17
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
71
Issue
3
Year of publication
1993
Pages
420 - 423
Database
ISI
SICI code
0031-9007(1993)71:3<420:EIGABC>2.0.ZU;2-5
Abstract
The LO phonon resonant Raman scattering is studied in GaAs/Al0.32Ga0.6 8As Bragg confining structures and in a similar (reference) superlatti ce. Strong resonances, with a large outgoing/incoming beam intensity r atio, are observed in the spectral range of the (e(B):hh(B)) Bragg con fined excitons as well as in the (e(l):hh(l)) exciton band. The resona nce profiles are analyzed in terms of a model of exciton scattering by interface and alloy potential fluctuations. The Bragg confined IS exc itons are found to be virtually two dimensional, while those of the su perlattice are intermediate between two and three dimensions.