EPITAXIAL COSI2 FORMATION ON (001)SI BY REACTIVE DEPOSITION

Authors
READER AH DUCHATEAU JPWB CROMBEEN JE
Citation
Ah. Reader et al., EPITAXIAL COSI2 FORMATION ON (001)SI BY REACTIVE DEPOSITION, Semiconductor science and technology, 8(7), 1993, pp. 1204-1207
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
7
Year of publication
1993
Pages
1204 - 1207
Database
ISI
SICI code
0268-1242(1993)8:7<1204:ECFO(B>2.0.ZU;2-X
Abstract
The formation of epitaxial CoSi2 thin films by reactive deposition of cobalt onto silicon (001) substrates at temperatures around 600-degree s-C is described. When the deposition rate is below a certain critical value for a particular substrate temperature (for example below 0.02 nm s-1 at 600-degrees-C), epitaxial disilicide formation can be achiev ed. Deposition rates above this critical value lead to the production of polycrystalline disilicide. A mechanism is described to explain the influence of the deposition rate on the formation of epitaxial materi al.