The formation of epitaxial CoSi2 thin films by reactive deposition of
cobalt onto silicon (001) substrates at temperatures around 600-degree
s-C is described. When the deposition rate is below a certain critical
value for a particular substrate temperature (for example below 0.02
nm s-1 at 600-degrees-C), epitaxial disilicide formation can be achiev
ed. Deposition rates above this critical value lead to the production
of polycrystalline disilicide. A mechanism is described to explain the
influence of the deposition rate on the formation of epitaxial materi
al.