SIMULATION OF ELECTRON-TRANSPORT IN SILICON - IMPACT-IONIZATION PROCESSES

Using non-parabolic ellipsoidal X and L valleys to represent the condu ction band of Si, we have developed a Monte Carlo simulation for the s tudy of electron transport properties in this material, under both low and high electric field conditions. Employing a simple model for the characterization of the impact ionization processes we have obtained t he ionization coefficient and the probability of electron ionization. The results highlight the importance of the L valleys in very high tra nsport phenomena, and compare favourably with other experimental and t heoretical data.