RECOMBINATION PARAMETERS OF EPITAXIAL CDXHG1-XTE CDTE LAYERS FROM PHOTOELECTROMAGNETIC AND PHOTOCONDUCTIVE EFFECTS/

Citation
Sa. Studenikin et Ia. Panaev, RECOMBINATION PARAMETERS OF EPITAXIAL CDXHG1-XTE CDTE LAYERS FROM PHOTOELECTROMAGNETIC AND PHOTOCONDUCTIVE EFFECTS/, Semiconductor science and technology, 8(7), 1993, pp. 1324-1330
Citations number
28
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
8
Issue
7
Year of publication
1993
Pages
1324 - 1330
Database
ISI
SICI code
0268-1242(1993)8:7<1324:RPOECC>2.0.ZU;2-G
Abstract
It is shown that photoconductivity (PC) of thin epitaxial CdxHg1-xTe/C dTe layers in the stationary crossed fields has a complicated non-mono tonic behaviour as a function of magnetic field. The analytical expres sions for PC and the photoelectromagnetic (PEM) effect, including diff usion, gradient and photoconductive components, are presented and qual itative physics is discussed. The experiments were carried out on liqu id-phase epitaxial CdxHg1-xTe/CdTe films of p-type conductivity with x congruent-to 0.2 at liquid-nitrogen temperature. On the basis of the combined analysis of PC and PEM effects a set of the recombination and diffusion parameters was determined: the volume lifetime, the diffusi on length, the surface recombination velocities and the internal elect ric field due to the composition gradient. Also, it is shown that from the PC measurements in different electric fields one can obtain infor mation about variation of the parameters across the layer.