Sa. Studenikin et Ia. Panaev, RECOMBINATION PARAMETERS OF EPITAXIAL CDXHG1-XTE CDTE LAYERS FROM PHOTOELECTROMAGNETIC AND PHOTOCONDUCTIVE EFFECTS/, Semiconductor science and technology, 8(7), 1993, pp. 1324-1330
It is shown that photoconductivity (PC) of thin epitaxial CdxHg1-xTe/C
dTe layers in the stationary crossed fields has a complicated non-mono
tonic behaviour as a function of magnetic field. The analytical expres
sions for PC and the photoelectromagnetic (PEM) effect, including diff
usion, gradient and photoconductive components, are presented and qual
itative physics is discussed. The experiments were carried out on liqu
id-phase epitaxial CdxHg1-xTe/CdTe films of p-type conductivity with x
congruent-to 0.2 at liquid-nitrogen temperature. On the basis of the
combined analysis of PC and PEM effects a set of the recombination and
diffusion parameters was determined: the volume lifetime, the diffusi
on length, the surface recombination velocities and the internal elect
ric field due to the composition gradient. Also, it is shown that from
the PC measurements in different electric fields one can obtain infor
mation about variation of the parameters across the layer.