INPLANE PHOTOCONDUCTIVE PROPERTIES OF MBE-GROWN GAAS GAALAS MULTIPLE-QUANTUM WELLS/

Authors
ARIKAN MC ERGUN Y BALKAN N RIDLEY BK
Citation
Mc. Arikan et al., INPLANE PHOTOCONDUCTIVE PROPERTIES OF MBE-GROWN GAAS GAALAS MULTIPLE-QUANTUM WELLS/, Semiconductor science and technology, 8(7), 1993, pp. 1337-1346
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
7
Year of publication
1993
Pages
1337 - 1346
Database
ISI
SICI code
0268-1242(1993)8:7<1337:IPPOMG>2.0.ZU;2-3
Abstract
The results of investigations into in-plane photoconductivity in GaAs/ Ga0.7Al0.3As multiple quantum wells are presented. The results indicat e clearly that the experimental technique can be used as a reliable an d sensitive tool to determine the purity of the material and the excit onic transitions that occur in the quantum well structures. It is show n that the photoconductivity is a strong function of the excitation in tensity and the modulation frequency. The effects Of DC background ill umination and the application of longitudinal electric fields are also studied and the results are compared with a model based on hot-electr on percolation in quantum well structures.