THERMALLY DETECTED OPTICAL-ABSORPTION AND PHOTOLUMINESCENCE IN A GAASGAALAS MULTIQUANTUM-WELL SAMPLE/

Citation
D. Boffety et al., THERMALLY DETECTED OPTICAL-ABSORPTION AND PHOTOLUMINESCENCE IN A GAASGAALAS MULTIQUANTUM-WELL SAMPLE/, Semiconductor science and technology, 8(7), 1993, pp. 1408-1411
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
8
Issue
7
Year of publication
1993
Pages
1408 - 1411
Database
ISI
SICI code
0268-1242(1993)8:7<1408:TDOAPI>2.0.ZU;2-W
Abstract
A multiquantum well (MQW) GaAs/GaAlAs system is studied by a non-conve ntional technique of thermally detected optical absorption (TD-OA) in which the sample temperature variation is measured by a germanium ther mometer at 0.5 K. In such a sample, for which the holder and quantum w ell materials are the same, the QW transitions give rise to temperatur e minima. The latter are interpreted in terms of intensity variations of the energy reflected at the interfaces of the wells close to the ex citonic recombinations. The TD-OA spectra corresponding to the n = 1 h eavy-hole and light-hole excitonic transitions in the wells are examin ed, together with the spectra obtained by conventional photoluminescen ce. Doublet lines involving QW excited levels, a component of which is due to a transition only allowed by valence band mixing, are also det ected as in photoluminescence excitation.