D. Boffety et al., THERMALLY DETECTED OPTICAL-ABSORPTION AND PHOTOLUMINESCENCE IN A GAASGAALAS MULTIQUANTUM-WELL SAMPLE/, Semiconductor science and technology, 8(7), 1993, pp. 1408-1411
A multiquantum well (MQW) GaAs/GaAlAs system is studied by a non-conve
ntional technique of thermally detected optical absorption (TD-OA) in
which the sample temperature variation is measured by a germanium ther
mometer at 0.5 K. In such a sample, for which the holder and quantum w
ell materials are the same, the QW transitions give rise to temperatur
e minima. The latter are interpreted in terms of intensity variations
of the energy reflected at the interfaces of the wells close to the ex
citonic recombinations. The TD-OA spectra corresponding to the n = 1 h
eavy-hole and light-hole excitonic transitions in the wells are examin
ed, together with the spectra obtained by conventional photoluminescen
ce. Doublet lines involving QW excited levels, a component of which is
due to a transition only allowed by valence band mixing, are also det
ected as in photoluminescence excitation.