CYCLOTRON-RESONANCE OF HIGH-MOBILITY GAAS ALGAAS(311) 2DHGS/

Authors
HAWKSWORTH SJ HILL S JANSSEN TJBM CHAMBERLAIN JM SINGLETON J EKENBERG U SUMMERS GM DAVIES GA NICHOLAS RJ VALADARES EC HENINI M PERENBOOM JAAJ
Citation
Sj. Hawksworth et al., CYCLOTRON-RESONANCE OF HIGH-MOBILITY GAAS ALGAAS(311) 2DHGS/, Semiconductor science and technology, 8(7), 1993, pp. 1465-1469
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
7
Year of publication
1993
Pages
1465 - 1469
Database
ISI
SICI code
0268-1242(1993)8:7<1465:COHGA2>2.0.ZU;2-G
Abstract
Cyclotron resonance of high-mobility (up to 300000 cm2 V-1 s-1 at 100 mK) GaAs/AlGaAs two-dimensional hole gases (2DHGS) grown on (311)A ori ented substrates has been measured in magnetic fields up to 17 T and a t temperatures down to 350 mK. The 2D hole density is in the range (1. 0-2.0) x 10(11) cm-2. Two resonances are in general observed; at low m agnetic fields the lower-field resonance dominates but a progressive t ransfer of oscillator strength takes place as the field increases. A s elf-consistent calculation of the Landau fan diagram for the higher-sy mmetry (100) direction is used to interpret the data and identify the observed transitions.