NEW THEORETICAL-MODEL FOR OPTICAL-TRANSITIONS IN THE PHOTOREFLECTANCESPECTRUM FROM DELTA-DOPED STRUCTURES

A theoretical approach to the interpretation of the physical mechanism s of electron transitions in delta-doped structures is proposed. Spati al variations of electric field and effective bandgap within the delta region are taken into account in order to simulate differential photo reflectance spectra from Si delta doping in GaAs. A good qualitative a greement between the theoretical results and recent experimental data confirms the validity of the present model. This indicates that photor eflectance spectra from delta-doped structures may be described in ter ms of the common three-dimensional two-particle Franz-Keldysh effect.