THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI SI1-YGEY/SI HETEROJUNCTIONS/

Authors
BRIGHTEN JC HAWKINS ID PEAKER AR KUBIAK RA PARKER EHC WHALL TE
Citation
Jc. Brighten et al., THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI SI1-YGEY/SI HETEROJUNCTIONS/, Semiconductor science and technology, 8(7), 1993, pp. 1487-1489
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
7
Year of publication
1993
Pages
1487 - 1489
Database
ISI
SICI code
0268-1242(1993)8:7<1487:TDOVDA>2.0.ZU;2-J
Abstract
The valence band offsets in Si/Si1-yGey/Si strained-layer heterostruct ures with 0 < y < 0.14 have been determined by CV measurements and fro m the analysis of Kroemer. Good agreement is obtained with theoretical predictions of values in the range 0 to 0.1 eV. Extracted interface c harge densities are consistent with values deduced from parallel trans port measurements in 2DHG structures.