CRYSTALLINE QUALITY OF HIGHLY ORIENTED DIAMOND FILMS GROWN ON [100]SILICON STUDIED BY CONVENTIONAL TEM

Two diamond films grown in a highly oriented way on [100] Si have been synthesised using a MPCVD process and observed by TEM to study their crystalline quality. The observation of plan view thin foils taken at different altitudes in the films allows to show up an evolution of the nature and the spatial distribution of structural defects (dislocatio ns and planar defects) present in the crystals constituting the studie d films. We define thus a critical thickness, which depends on synthes is parameters, nucleation density and proportion of oriented nuclei, a nd below which the crystalline quality is restricted by the presence o f misoriented crystals and crystalline volumes filled with planar defe cts. Above that critical thickness, these disturbances disappear, lead ing to films presenting a high crystalline quality, only limited by di slocations and quite clean grain boundaries.