EFFECT OF ANNEALING ON THE SURFACE AND INTERFACE PROPERTIES OF INDIUMOXIDE SILICON STRUCTURES

Indium-indium oxide films were formed by vacuum evaporation of element al indium onto Si/SiO2 substrates. It is shown that the oxidation of i ndium takes place at the substrate. The surface and structure of the f ilm were investigated using X-ray diffraction and scanning electron mi croscopy. X-ray photoelectron spectroscopy and electrical (capacitance -voltage) characterization were used to study the effect of annealing on the interface. Temperature studies of this system indicate the grow th of an interfacial insulating layer. This layer was identified as an oxide of silicon. This study is significant for understanding the beh avior of In2O3/Si structures used in a variety of applications such as silicon doping with indium and sensor fabrication using an evaporated indium film.