LIFTOFF-TECHNIQUE OF SINGLE-CRYSTAL DIAMOND PLATES - STUDY OF THE LATTICE DAMAGE OF THE IMPLANTED SUBSTRATES AND THE CRYSTALLINE QUALITY OFTHE HOMOEPITAXIAL FILMS BY ION CHANNELING

Diamond substrates were deeply implanted by 4.5 MeV O+. The doses were in the range of 2.5 x 10(16) up to 8.0 x 10(17) at. cm(-2). After ann ealing at 1200 degrees C, homoepitaxial diamond films were deposited o nto the substrates. The surface films were then removed by selective e tching of the ion-damaged layer at 580 degrees C in flowing air. This process was repeated with the remaining substrates. The lattice damage of the substrates and the crystalline quality of the homoepitaxial fi lms were investigated by ion channelling at following process steps: ( 0) before implantation; (1) after implantation; (2) after annealing; ( 3) after deposition; (4) after the liftoff-step; and (5) after the sec ond deposition step. The channelling analyses proved that it is possib le to deposit high-quality diamond onto the ion-damaged substrates and to repeat the liftoff-technique without additional process steps such as, e.g., polishing the substrates after removing the epitaxial films .