STRUCTURAL-SENSITIVE CHARACTERISTICS OF V ALENT ZONE DURING DISORDERING IN SILICON

Authors
ARTEMEV AV GALAEV AA MILVIDSKII AM PARKHOMENKO YN
Citation
Av. Artemev et al., STRUCTURAL-SENSITIVE CHARACTERISTICS OF V ALENT ZONE DURING DISORDERING IN SILICON, Kristallografia, 38(3), 1993, pp. 181-183
Citations number
4
Categorie Soggetti
Crystallography
Journal title
Kristallografia → ACNP
ISSN journal
00234761
Volume
38
Issue
3
Year of publication
1993
Pages
181 - 183
Database
ISI
SICI code
0023-4761(1993)38:3<181:SCOVAZ>2.0.ZU;2-Z