0.5 MU-M GATE LENGTH INP IN0.75GA0.25AS/INP PSEUDOMORPHIC HEMT WITH HIGH DC AND RF PERFORMANCE/

Authors
KUSTERS AM FUNKE T SOMMER V WULLER R BRITTNER S KOHL A HEIME K
Citation
Am. Kusters et al., 0.5 MU-M GATE LENGTH INP IN0.75GA0.25AS/INP PSEUDOMORPHIC HEMT WITH HIGH DC AND RF PERFORMANCE/, Electronics Letters, 29(10), 1993, pp. 841-842
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
10
Year of publication
1993
Pages
841 - 842
Database
ISI
SICI code
0013-5194(1993)29:10<841:0MGLII>2.0.ZU;2-E
Abstract
High performance InP/In0.75Ga0.25As/InP pseudomorphic double heterojun ction (DH) HEMTs with a gate length of 0.5 mum are reported. Both DC a nd RF characteristics of this new type of Al-free HEMT demonstrate its suitability for microwave applications.