INFLUENCE OF POLYSILICON DEPOSITION ON FABRICATION OF POWER POLYSILICON EMITTER BIPOLAR-TRANSISTORS

Authors
AUSTIN P CAMINADE J SANCHEZ JL
Citation
P. Austin et al., INFLUENCE OF POLYSILICON DEPOSITION ON FABRICATION OF POWER POLYSILICON EMITTER BIPOLAR-TRANSISTORS, Electronics Letters, 29(9), 1993, pp. 741-743
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
9
Year of publication
1993
Pages
741 - 743
Database
ISI
SICI code
0013-5194(1993)29:9<741:IOPDOF>2.0.ZU;2-S
Abstract
The aim was to fabricate a polysilicon emitter bipolar transistor for power applications. To this end, different polysilicon deposition step s compatible with the power bipolar technology and their influence on electrical characteristics were studied,