NEW ETCHANT FOR CRYSTALLOGRAPHIC DEFECT STUDIES IN THIN SOI MATERIALS(LESS-THAN-1000 A-ANGSTROM)

Authors
GILES LF NEJIM A HEMMENT PLF
Citation
Lf. Giles et al., NEW ETCHANT FOR CRYSTALLOGRAPHIC DEFECT STUDIES IN THIN SOI MATERIALS(LESS-THAN-1000 A-ANGSTROM), Electronics Letters, 29(9), 1993, pp. 788-789
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
9
Year of publication
1993
Pages
788 - 789
Database
ISI
SICI code
0013-5194(1993)29:9<788:NEFCDS>2.0.ZU;2-J
Abstract
A new etchant has been developed to delineate crystallographic defects in thin silicon films (<1000 angstrom). The new etchant is based on t he HF:HNO3:H2O system with the addition of potassium dichromate and co pper nitrate salts. Analyses by plan view TEM have confirmed that sili con films as thin as 500 angstrom can be analysed using this new etch.