OPTICAL-GAIN ENHANCEMENT IN RESONANT-CAVITY HETEROJUNCTION BIPOLAR PHOTOTRANSISTOR THROUGH EMITTER-EDGE THINNING

Authors
HUANG FY ZHOU GL FAN ZF GAO GB BOTCHKAREV AE SVERDLOV B MORKOC H
Citation
Fy. Huang et al., OPTICAL-GAIN ENHANCEMENT IN RESONANT-CAVITY HETEROJUNCTION BIPOLAR PHOTOTRANSISTOR THROUGH EMITTER-EDGE THINNING, Electronics Letters, 29(9), 1993, pp. 807-808
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
9
Year of publication
1993
Pages
807 - 808
Database
ISI
SICI code
0013-5194(1993)29:9<807:OEIRHB>2.0.ZU;2-4
Abstract
The authors use a lateral emitter resistor in floating base GaAs/InGaA s/AlGaAs heterojunction bipolar phototransistors to reduce the surface recombination in the vertical wall of the emitter-base junction and i ncrease the photosensitivity at low injection levels. The same process also reduces the dark current in the reverse biased collector junctio n.