DEEP-LEVEL TRANSIENT SPECTROSCOPY OF HIGH-ENERGY HEAVY-ION IRRADIATION-INDUCED DEFECTS IN N-TYPE GERMANIUM

Swift heavy ion irradiation-induced defects have been studied in n-typ e germanium at room temperature using deep level transient spectroscop y. Several electron traps have been observed after irradiation. The co rresponding energies have been determined to be at E(c)-0.22, E(c)-0.2 75, E(c)-0.29, E(c)-0.32, and E(c)-0.465 eV. The isochronal annealing behavior of these traps has been studied in detail between room temper ature and 200-degrees-C. Comparison of our results with previously pub lished ones allowed an identification of these defects with complexes like divacancies or associations of vacancies with impurities.