Kh. Kim et al., CHARACTERIZATION OF SI-28-40+ ION-IMPLANTED EPITAXIAL RESI2 FILMS ON AN N-SI(100) SUBSTRATE( AND AR), Journal of applied physics, 74(2), 1993, pp. 1046-1050
The structural and electrical characteristics of 300 keV Si+ or 380 ke
V Ar+ ion-implanted epitaxial ReSi2 films grown on an n-Si(100) substr
ate have been studied by using 2 MeV He-4+ ion backscattering spectrom
etry, x-ray diffraction, high-resolution transmission electron microsc
opy, and electrical measurement. Ion implantation causes static disord
er in the film, which overlap and grow to become an amorphous layer. T
he threshold dose for amorphizing the ReSi2 film is approximately 5 X
10(14)/cm2 for Si-28+ and approximately 1 X 10(14)/cm2 for Ar-40+. Alt
hough the resistivity of the implanted ReSi2 film decreases when the d
egree of disorder (or the implantation dose) is increased, the resisti
vity reaches a minimum value at a dose of approximately 1 X 10(15)/cm2
for Si+ or approximately 5 X 10(14)/cm2 for Ar+. The Si-28+-implanted
amorphous ReSi2 films recovered original epitaxy after thermal anneal
ing at 700-degrees-C for 30 min in vacuum, as do the partly amorphized
ReSi2 films by Ar-40+ implantation. On the other hand, those films fu
lly amorphized by Ar-40+ implantation (dose greater-than-or-equal-to 1
X 10(14)/cm2) did not recover after thermal annealing, even when expo
sed to a temperature as high as 1000-degrees-C for 30 min.