CHARACTERIZATION OF SI-28-40+ ION-IMPLANTED EPITAXIAL RESI2 FILMS ON AN N-SI(100) SUBSTRATE( AND AR)

The structural and electrical characteristics of 300 keV Si+ or 380 ke V Ar+ ion-implanted epitaxial ReSi2 films grown on an n-Si(100) substr ate have been studied by using 2 MeV He-4+ ion backscattering spectrom etry, x-ray diffraction, high-resolution transmission electron microsc opy, and electrical measurement. Ion implantation causes static disord er in the film, which overlap and grow to become an amorphous layer. T he threshold dose for amorphizing the ReSi2 film is approximately 5 X 10(14)/cm2 for Si-28+ and approximately 1 X 10(14)/cm2 for Ar-40+. Alt hough the resistivity of the implanted ReSi2 film decreases when the d egree of disorder (or the implantation dose) is increased, the resisti vity reaches a minimum value at a dose of approximately 1 X 10(15)/cm2 for Si+ or approximately 5 X 10(14)/cm2 for Ar+. The Si-28+-implanted amorphous ReSi2 films recovered original epitaxy after thermal anneal ing at 700-degrees-C for 30 min in vacuum, as do the partly amorphized ReSi2 films by Ar-40+ implantation. On the other hand, those films fu lly amorphized by Ar-40+ implantation (dose greater-than-or-equal-to 1 X 10(14)/cm2) did not recover after thermal annealing, even when expo sed to a temperature as high as 1000-degrees-C for 30 min.