Electrical characteristics associated with radiation detection were me
asured on single-crystal natural type-IIa diamond using two techniques
: charged particle-induced conductivity and time-resolved transient ph
otoinduced conductivity. The two techniques complement each other: The
charged particle-induced conductivity technique measures the product
of the carrier mobility mu and lifetime tau throughout the bulk of the
material while the transient photoconductivity technique measures the
carrier mobility and lifetime independently at the first few micromet
ers of the material surface. For each technique, the mutau product was
determined by integration of the respective signals. The collection d
istance that a free carrier drifts in an electric field was extracted
by each technique. As a result, a direct comparison of bulk and surfac
e electrical properties was performed. The data from these two techniq
ues are in agreement, indicating no difference in the electrical prope
rties between the bulk and the surface of the material. The collection
distance continues to increase with field up to 25 kV/cm without satu
ration. Using the transient photoconductivity technique the carrier mo
bility was measured separately and compared with a simple electron-pho
non scattering model. The general characteristics of carrier mobility,
lifetime, and collection distance at low electric field appear to be
adequately described by the model.