R. Hakimzadeh et Sg. Bailey, MINORITY-CARRIER DIFFUSION LENGTH AND EDGE SURFACE-RECOMBINATION VELOCITY IN INP, Journal of applied physics, 74(2), 1993, pp. 1118-1123
A scanning electron microscope was used to obtain the electron-beam-in
duced current (EBIC) profiles in InP specimens containing a Schottky b
arrier perpendicular to the scanned (edge) surface. An independent tec
hnique was used to measure the edge surface-recombination velocity (V(
s)). These values were used in a fit of the experimental EBIC data wit
h a theoretical expression for normalized EBIC [C. Donolato, Solid Sta
te Electron. 25, 1077 (1982)] to obtain the electron (minority carrier
) diffusion length (L(n)).