PREFERENTIAL AXIS CONTROL OF YBA2CU3OX THIN-FILM BY QUASI-LATTICE-MATCH ENGINEERING

The lowest temperature for c-axis preferred oriented thin film growth is investigated for films on different substrate materials. This tempe rature has a maximum when the lattice constant of the substrate matche s that of YBa2Cu3Ox. This result readily explains a-axis preferred ori ented film growth by the template technique. We propose quasilattice-m atch engineering as a technique for controlling the preferential orien tation axis of a part of a YBa2Cu3Ox thin film by using a seed layer w hose lattice mismatch differs from that of the substrate. The part of the YBa2Cu3Ox thin film on a PrGaO3 seed layer is a-axis oriented and the film directly deposited on a SrTiO3 substrate is c-axis oriented.