DIELECTRIC POLARIZATION RELAXATION MEASUREMENT IN ALPHA-SIO2 BY MEANSOF A SCANNING ELECTRON-MICROSCOPE TECHNIQUE

Authors
OH KH LEGRESSUS C GONG H ONG CK TAN BTG DING XZ
Citation
Kh. Oh et al., DIELECTRIC POLARIZATION RELAXATION MEASUREMENT IN ALPHA-SIO2 BY MEANSOF A SCANNING ELECTRON-MICROSCOPE TECHNIQUE, Journal of applied physics, 74(2), 1993, pp. 1250-1255
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
2
Year of publication
1993
Pages
1250 - 1255
Database
ISI
SICI code
0021-8979(1993)74:2<1250:DPRMIA>2.0.ZU;2-4
Abstract
A scanning electron microscope is used as a tool to study dielectric r elaxation processes in alpha-SiO2 by measuring the leakage current in the sample surrounded by a metallic aperture. A transient time (t(t)) of the order of a few seconds appears before the steady-state current is established. The time dependence of the trapping rate is found to f ollow a power law and to be related to relaxation processes of a diele ctric under electrical and thermal stress.