C. Donolato, A THEORY ON THE X-RAY-SENSITIVITY OF A SILICON SURFACE-BARRIER DETECTOR INCLUDING A THERMAL CHARGE-DIFFUSION EFFECT - COMMENT, Journal of applied physics, 74(2), 1993, pp. 1462-1462
It is shown that a recent analysis by Cho et al. V. Appl. Phys. 72, 33
63 (1992)] of surface-barrier detectors does not represent a new appro
ach and is affected by gross errors, which lead to a wrong factor of 1
/2 in the charge-collection probability and to the incorrect conclusio
n that one- and three-dimensional charge-diffusion models disagree.