A THEORY ON THE X-RAY-SENSITIVITY OF A SILICON SURFACE-BARRIER DETECTOR INCLUDING A THERMAL CHARGE-DIFFUSION EFFECT - COMMENT

Authors
Citation
C. Donolato, A THEORY ON THE X-RAY-SENSITIVITY OF A SILICON SURFACE-BARRIER DETECTOR INCLUDING A THERMAL CHARGE-DIFFUSION EFFECT - COMMENT, Journal of applied physics, 74(2), 1993, pp. 1462-1462
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
74
Issue
2
Year of publication
1993
Pages
1462 - 1462
Database
ISI
SICI code
0021-8979(1993)74:2<1462:ATOTXO>2.0.ZU;2-O
Abstract
It is shown that a recent analysis by Cho et al. V. Appl. Phys. 72, 33 63 (1992)] of surface-barrier detectors does not represent a new appro ach and is affected by gross errors, which lead to a wrong factor of 1 /2 in the charge-collection probability and to the incorrect conclusio n that one- and three-dimensional charge-diffusion models disagree.