ELECTRON-PHONON SCATTERING IN THIN BISMUT H-FILMS

The paper reports on a comprehensive investigation of the effect of we ak localization and interaction of electron and the electron overheati ng effect in thin (about 100 angstrom) bismuth films at helium tempera tures. The temperature dependences of the time of electron relaxation inelastic process have been obtained from the magnetic field dependenc es of the quantum corrections to conductivity, and the alteration of t he quantum corrections to conductivity under electron overheating have been used to find the temperature dependence of the electron-phonon s cattering time in the temperature range where the electron kinetics is dominated by the electron-electron interaction processes.