The photodissociation of N2O doped in Xe matrices and the subsequent d
ynamics of atomic oxygen production have been studied. The O atom conc
entration is monitored via the laser-induced fluorescence of XeO excip
lexes produced by the 193 nm excitation of Xe/O pairs. The O atom phot
oproduction cross section for 193 nm irradiation of N2O is 6.4 +/- 1.0
X 10(-20) cm2 at 27 K, comparable to the gas phase value of 1.1 X 10(
-19) cm2. Dissociation of XeO exciplexes generates kinetically hot O a
toms which are mobile. This photoinduced mobility can lead to O atom l
oss by recombination. The extent of O atom production as a function of
laser irradiation is governed by a competition between the rates of p
hotoproduction and photoinduced loss. The effects of temperature, conc
entration, and laser fluence on the production of O atoms are consider
ed. The efficiency of photoinduced O atom loss increases significantly
with increasing temperature. An ultraviolet absorption spectrum of Xe
O has been obtained with an absorption cross section of 1.9 +/- 0.4 x
10(-16) cm2 at 248 nm.