METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY CD1-XZNXTE ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.27) FILMS

High-quality (001) Cd1-xZnxTe (0 less-than-or-equal-to x less-than-or- equal-to 0.27) films were grown by metalorganic molecular beam epitaxy on (001) GaAs substrates using thermally precracked dimethylcadmium, diethylzinc, and diethyltelluride. Cd1-xZnxTe/GaAs (0 less-than-or-equ al-to x less-than-or-equal-to 0.05) films of 6-9 mum thickness exhibit ed x-ray rocking curve full widths at half-maximum of 200-240 arcsec, and 290-350 arcsec was measured for Cd1-xZnxTe/GaAs (0.09 less-than-or -equal-to x less-than-or-equal-to 0.17). The crystalline quality for t he range of x values (0 less-than-or-equal-to x less-than-or-equal-to 0.27) reported here surpasses that previously published in the literat ure. The 5 K photoluminescence spectra of the Cd1-xZnxTe layers were d ominated by strong and sharp bound excitonic transitions. In addition, the free excitonic transition was observed in Cd1-xZnxTe layers with 0 less-than-or-equal-to x less-than-or-equal-to 0.06. Secondary ion ma ss spectrometry measurements showed that the films were free of O and C contamination.