GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
CHOI YH BESIKCI C SUDHARSANAN R RAZEGHI M
Citation
Yh. Choi et al., GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 63(3), 1993, pp. 361-363
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
3
Year of publication
1993
Pages
361 - 363
Database
ISI
SICI code
0003-6951(1993)63:3<361:GOIANI>2.0.ZU;2-4
Abstract
We report the growth of In1-xTlxSb, a new III-V alloy for long-wavelen gth infrared detector applications, by low-pressure metalorganic chemi cal vapor deposition. In1-xTlxSb with good surface morphology was obta ined on both GaAs and InSb substrates at a growth temperature of 455-d egrees-C. X-ray diffraction measurements showed resolved peaks of In1- xTlxSb and InSb films. Infrared absorption spectrum of In1-xTlxSb show ed a shift toward lower energies compared to InSb spectrum. Hall mobil ity data on In1-xTlxSb/InSb/GaAs structure showed enhanced mobility at low temperatures compared to InSb/GaAs structure.