HOLE GENERATION BY ICOSAHEDRAL B-12 IN HIGH-DOSE BORON AS-IMPLANTED SILICON

Authors
MIZUSHIMA I WATANABE M MURAKOSHI A HOTTA M KASHIWAGI M YOSHIKI M
Citation
I. Mizushima et al., HOLE GENERATION BY ICOSAHEDRAL B-12 IN HIGH-DOSE BORON AS-IMPLANTED SILICON, Applied physics letters, 63(3), 1993, pp. 373-375
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
3
Year of publication
1993
Pages
373 - 375
Database
ISI
SICI code
0003-6951(1993)63:3<373:HGBIBI>2.0.ZU;2-H
Abstract
It was found that a high concentration of holes was generated without any post-annealing by boron ion implantation into silicon in the high- dose region of more than 1 X 10(16) cm-2. X-ray photoelectron spectros copy and Fourier transform infrared absorption spectrum revealed that B-12 icosahedra were created just after implantation. The generation o f holes can be explained by the model in which B-12 icosahedra act as a double acceptor.