ELECTRON-BEAM-INDUCED ABSORPTION MODULATION IMAGING OF STRAINED IN0.2GA0.8AS GAAS MULTIPLE-QUANTUM WELLS/

Authors
RICH DH RAMMOHAN K TANG Y LIN HT MASERJIAN J GRUNTHANER FJ LARSSON A BORENSTAIN SI
Citation
Dh. Rich et al., ELECTRON-BEAM-INDUCED ABSORPTION MODULATION IMAGING OF STRAINED IN0.2GA0.8AS GAAS MULTIPLE-QUANTUM WELLS/, Applied physics letters, 63(3), 1993, pp. 394-396
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
3
Year of publication
1993
Pages
394 - 396
Database
ISI
SICI code
0003-6951(1993)63:3<394:EAMIOS>2.0.ZU;2-E
Abstract
We have examined the effects of electron-hole plasma generation on exc itonic absorption phenomena in nipi-doped In0.2Ga0.8As/GaAs multiple q uantum wells (MQWs) using a novel technique called electron beam-induc ed absorption modulation imaging. The electron-hole plasma is generate d by a high-energy electron beam in a scanning electron microscope and is used as a probe to study the MQW absorption modulation. The influe nce of structural defects on the diffusive transport of carriers is im aged with a mum-scale resolution.