N. Bouarissa et H. Aourag, ELECTRON-POSITRON MOMENTUM DENSITY IN INASXSB1-X, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 75(3), 1997, pp. 325-334
Positron annihilation calculations have been performed on semiconducto
r alloys with the aim of studying the disorder effect on the electron
momentum distribution in InAsxSb1-x. The electron wavefunctions are ca
lculated using the pseudopotential method within the virtual-crystal a
pproximation with and without incorporating the disorder effect as an
effective potential. The calculations of the positron wavefunctions ha
ve been made in an identical manner, employing the point-core approxim
ation for the ionic potential. The shapes of the profiles indicate tha
t the angular correlation of positron annihilation radiation along dif
ferent crystallographic directions in InAsxSb1-x is not sensitive to t
he disorder effect.