INFLUENCE OF SURFACTANTS ON THE GROWTH-KINETICS OF SI ON SI(111)

We compare the Si/Si(111) homoepitaxy with the growth modified using S b, As and Ga as surfactants. STM measurements show an increased densit y of 2D-islands for surfactant-mediated epitaxy, i.e. the surface diff usion of Si is reduced. The surfactant-modified epitaxy which is energ etically driven by the reduction of surface free energy has a strong i nfluence on growth-kinetics. This kinetically limited growth can expla in the suppression of 3D-islanding in the case of heteroepitaxial grow th. The size of the critical nucleus and activation energy for Si/Si(1 11) surface diffusion are determined.