THE SELF-ORGANIZATION OF SI ATOMS ADSORBED ON A SI(100) SURFACE - AN ATOMIC-LEVEL KINETIC-MODEL

Authors
ZHANG ZY METIU H
Citation
Zy. Zhang et H. Metiu, THE SELF-ORGANIZATION OF SI ATOMS ADSORBED ON A SI(100) SURFACE - AN ATOMIC-LEVEL KINETIC-MODEL, Surface science, 292(1-2), 1993, pp. 120000781-120000785
Citations number
21
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
292
Issue
1-2
Year of publication
1993
Pages
120000781 - 120000785
Database
ISI
SICI code
0039-6028(1993)292:1-2<120000781:TSOSAA>2.0.ZU;2-E
Abstract
We present a kinetic model which explains how the Si atoms adsorbed on a Si(100) surface form nearly flawless, thin, long dimer rows oriente d perpendicular to the direction of fast diffusion. Kinetic Monte Carl o simulations based on this model lead to islands similar to those obs erved experimentally.