MICROWAVE OPERATION OF HIGH-POWER INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/

Authors
MACK MP BAYRAKTAROGLU B KEHIAS L BARRETTE J NEIDHARD R FITCH R SCHERER R DAVITO D WEST W
Citation
Mp. Mack et al., MICROWAVE OPERATION OF HIGH-POWER INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Electronics Letters, 29(12), 1993, pp. 1068-1069
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
12
Year of publication
1993
Pages
1068 - 1069
Database
ISI
SICI code
0013-5194(1993)29:12<1068:MOOHIG>2.0.ZU;2-7
Abstract
The first high power demonstration of an InGaP/GaAs heterojunction bip olar transistor is presented. Multifinger selfaligned HBTs were tested at 3 GHz. A maximum Output power of 2.82 W CW was obtained for a 600 mum2 emitter area device (4.7 mW/mum2 power density) with an attendant gain of 6.92 dB; simultaneously, the device exhibited 55.2% power add ed efficiency, 69.1% collector efficiency and 8.0 x 10(4) A/cm2 emitte r current density.