STATIC FREQUENCY-DIVIDERS FOR HIGH OPERATING SPEED (25 GHZ, 170MW) AND LOW-POWER CONSUMPTION (16 GHZ, 8MW) IN SELECTIVE EPITAXIAL SI BIPOLAR TECHNOLOGY

Authors
FELDER A STENGL R HAUENSCHILD J REIN HM MEISTER TF
Citation
A. Felder et al., STATIC FREQUENCY-DIVIDERS FOR HIGH OPERATING SPEED (25 GHZ, 170MW) AND LOW-POWER CONSUMPTION (16 GHZ, 8MW) IN SELECTIVE EPITAXIAL SI BIPOLAR TECHNOLOGY, Electronics Letters, 29(12), 1993, pp. 1072-1074
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
12
Year of publication
1993
Pages
1072 - 1074
Database
ISI
SICI code
0013-5194(1993)29:12<1072:SFFHOS>2.0.ZU;2-Z
Abstract
Static frequency dividers have been fabricated in a selective epitaxia l bipolar technology using 0.8 mum lithography. The measured maximum f requency of 25 GHz is the highest value reported for static silicon di viders. Moreover, a 16 GHz low-power version is presented which consum es only 8 mW in the first stage.