RECOVERY OF SUBMICROMETER PMOSFETS FROM HOT-CARRIER DEGRADATION BY HIGH-FIELD INJECTION

Authors
ZHANG JF TAYLOR S ECCLESTON W BARLOW K
Citation
Jf. Zhang et al., RECOVERY OF SUBMICROMETER PMOSFETS FROM HOT-CARRIER DEGRADATION BY HIGH-FIELD INJECTION, Electronics Letters, 29(12), 1993, pp. 1097-1099
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
12
Year of publication
1993
Pages
1097 - 1099
Database
ISI
SICI code
0013-5194(1993)29:12<1097:ROSPFH>2.0.ZU;2-3
Abstract
Charge carrier tunnelling into gate oxide under high field strength (e .g. 8 MV/cm) is found to be an efficient method for the recovery of ho t electron induced pMOSFET degradation, including hot electron induced punchthrough effects. The physical processes responsible for the reco very are investigated.