EXTREMELY SMOOTH SIDEWALLS FOR GAAS ALGAAS RIDGE WAVE-GUIDES/

Authors
ARNOT HEG ZAPPE HP EPLER JE GRAF B WIDMER R LEHMANN HW
Citation
Heg. Arnot et al., EXTREMELY SMOOTH SIDEWALLS FOR GAAS ALGAAS RIDGE WAVE-GUIDES/, Electronics Letters, 29(12), 1993, pp. 1131-1133
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
12
Year of publication
1993
Pages
1131 - 1133
Database
ISI
SICI code
0013-5194(1993)29:12<1131:ESSFGA>2.0.ZU;2-3
Abstract
Magnetic field enhanced reactive ion etching using SiCl4, combined wit h a smooth reflowed photoresist masking technique, has been used to fa bricate AlGaAs ridge waveguides with extremely smooth sidewalls. The e ffect of pressure, flow-rate and power on etch rate and sidewall smoot hness has been studied. Waveguides exhibited optical losses comparable to those obtained using wet etching.