MONOLITHIC GAAS ALGAAS PIN MESFET PHOTORECEIVER USING A SINGLE MOLECULAR-BEAM EPITAXY GROWTH STEP/

Authors
NICHOLS D DUTTA NK BERGER PR SMITH PR SIVCO D CHO AY
Citation
D. Nichols et al., MONOLITHIC GAAS ALGAAS PIN MESFET PHOTORECEIVER USING A SINGLE MOLECULAR-BEAM EPITAXY GROWTH STEP/, Electronics Letters, 29(12), 1993, pp. 1133-1134
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
12
Year of publication
1993
Pages
1133 - 1134
Database
ISI
SICI code
0013-5194(1993)29:12<1133:MGAPMP>2.0.ZU;2-3
Abstract
A monolithic pin/MESFET photoreceiver in the GaAs/AlGaAs system was in vestigated. The structure used a single epitaxial growth step in which the pin photodiode was grown on top of the MESFET. The photoreceivers exhibited flat-band gains as high as 17 dB and bandwidths as high as 2.0 GHz.