SHALLOW P-TYPE OHMIC CONTACT TO GA0.47IN0.53AS USING AU TI/MN/W/

Authors
CHANG TY HE Y SAUER NJ WESTERWICK EH STORZ FG WILLIAMS MD
Citation
Ty. Chang et al., SHALLOW P-TYPE OHMIC CONTACT TO GA0.47IN0.53AS USING AU TI/MN/W/, Electronics Letters, 29(12), 1993, pp. 1139-1141
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
12
Year of publication
1993
Pages
1139 - 1141
Database
ISI
SICI code
0013-5194(1993)29:12<1139:SPOCTG>2.0.ZU;2-9
Abstract
The specific contact resistances of annealed Au/Ti/W contacts on 0.2 a nd 2 x 1 0(19) cm-3 Be doped GaInAs are found to decrease by factors o f approximately 1000 and approximately 3, respectively, when a thin Mn layer is inserted between Ti and W, reaching 2.7 x 10(-6)OMEGA cm2 in the latter case. This type of shallow and thermally stable p-type ohm ic contact avoids the problems associated with very high Be, or Zn dop ing and should be well suited for applications in high performance dev ices on InP substrate.