LOW-FREQUENCY NOISE ON SEMICONDUCTOR ELECTRODES

It has been shown that the main reason for the low-frequency noise app earing when InP, GaAs, and CdSe electrodes are illuminated in solution s containing KCl and the S2-/Sn2- and Fe(CN)63-/Fe(CN)64- redox system s is modulation of the accessible surface of the electrodes due to the occurrence of a photocorrosion process and the accumulation of produc ts of electrochemical photoreactions. A value for the shot noise coeff icient gamma = 1, which attests to the absence of correlated electron transfer during the reaction, has been obtained for the anodic oxidati on of InP.