FORMATION OF SELF-ASSEMBLING CDSE QUANTUM DOTS ON ZNSE BY MOLECULAR-BEAM EPITAXY

Citation
Sh. Xin et al., FORMATION OF SELF-ASSEMBLING CDSE QUANTUM DOTS ON ZNSE BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 69(25), 1996, pp. 3884-3886
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
25
Year of publication
1996
Pages
3884 - 3886
Database
ISI
SICI code
0003-6951(1996)69:25<3884:FOSCQD>2.0.ZU;2-L
Abstract
We report the formation of self-assembling CdSe quantum dots during mo lecular beam epitaxial growth on ZnSe and ZnMnSe. Atomic force microsc opy measurements on specimens with uncapped dots show relatively narro w dot size distributions, with typical dot diameters of 40+/-5 nm, and with a diameter-to-height ratio consistently very close to 4:1. Uncap ped CdSe dots are unstable with time: their density was observed to dr op by an order of magnitude in 10 days, with clear evidence of ripenin g observed for some dots. Photoluminescence from capped dots indicates exciton localization much stronger than in ZnCdSe/ZnSe quantum wells, due to the additional lateral confinement. (C) 1996 American Institut e of Physics.