A REM STUDY OF INHOMOGENEOUS STRESS-FIELDS INDUCED BY THE INTERFACIALSTEPS AT IN0.2GA0.8AS GAAS INTERFACE/

Citation
J. Jiang et al., A REM STUDY OF INHOMOGENEOUS STRESS-FIELDS INDUCED BY THE INTERFACIALSTEPS AT IN0.2GA0.8AS GAAS INTERFACE/, Superlattices and microstructures, 13(3), 1993, pp. 379-382
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
07496036
Volume
13
Issue
3
Year of publication
1993
Pages
379 - 382
Database
ISI
SICI code
0749-6036(1993)13:3<379:ARSOIS>2.0.ZU;2-6