DIRECT OPTICAL-INJECTION LOCKING OF MONOLITHICALLY INTEGRATED IN0.53GA0.47AS IN0.52AL0.48AS MODFET OSCILLATORS/

Authors
YANG D BHATTACHARYA PK BROCK T
Citation
D. Yang et al., DIRECT OPTICAL-INJECTION LOCKING OF MONOLITHICALLY INTEGRATED IN0.53GA0.47AS IN0.52AL0.48AS MODFET OSCILLATORS/, Electronics Letters, 29(11), 1993, pp. 944-945
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
11
Year of publication
1993
Pages
944 - 945
Database
ISI
SICI code
0013-5194(1993)29:11<944:DOLOMI>2.0.ZU;2-9
Abstract
The authors have fabricated monolithically integrated In0.53Ga0.47As/I n0.52Al0.48As 0.25 mum gate modulation-doped field effect transistor ( MODFET) oscillators. The results of direct optical subharmonic injecti on locking of these oscillator circuits at 10.159 and 19.033 GHz are p resented.