HIGH-EFFICIENCY OPERATION OF ALGAAS GAAS POWER HETEROJUNCTION BIPOLAR-TRANSISTORS AT LOW COLLECTOR SUPPLY VOLTAGE/

Authors
MATSUOKA Y YAMAHATA S NAKATSUGAWA M MURAGUCHI M ISHIBASHI T
Citation
Y. Matsuoka et al., HIGH-EFFICIENCY OPERATION OF ALGAAS GAAS POWER HETEROJUNCTION BIPOLAR-TRANSISTORS AT LOW COLLECTOR SUPPLY VOLTAGE/, Electronics Letters, 29(11), 1993, pp. 982-984
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
11
Year of publication
1993
Pages
982 - 984
Database
ISI
SICI code
0013-5194(1993)29:11<982:HOOAGP>2.0.ZU;2-J
Abstract
High-f(max) (> 160 GHz) AlGaAs/GaAs heterojunction bipolar transistors are developed using power-oriented layer structures and a selfalignme nt fabrication technology characterised by a base-metal overlaid struc ture. The fabricated power transistors tested at 2.6 GHz yield maximum power-added efficiencies of 69 and 60% at low supply voltages of 3 an d 1.5 V, respectively.