SELF-ASSEMBLED QUANTUM DOTS OF INSB GROWN ON INP BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY - MORPHOLOGY AND STRAIN RELAXATION

Self-organized InSb dots grown by atomic layer molecular beam epitaxy on InP substrates have been characterized by atomic force and transmis sion electron microscopy. Measurement of high-energy electron diffract ion during the growth indicates a Stransky-Krastanov growth mode beyon d the onset of 1.4 InSb monolayer (ML) deposition. The dots obtained a fter a total deposition of 5 and 7 hit of InSb present a truncated pyr amidal morphology with rectangular base oriented along the [110] direc tions, elongated forwards the [110] direction with {111}B lateral face ts, with {113}/{114}/{111}A lateral facets in [1 (1) over bar 0] views , and (001) flat top surfaces. The mismatch between the dot and the su bstrate has been accommodated by a network of 90 degrees misfit disloc ation at the interface. A corrugation of the InP substrate surrounding the dot has been also observed. (C) 1996 American Institute of Physic s.